ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,612, issued on Sept. 22, was assigned to Tokyo Electron Ltd. (Tokyo). "Methods and structures for improving etch profile of underlying lay... Read More
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,613, issued on Sept. 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Forming isolation regions with lo... Read More
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,614, issued on Sept. 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Protection of STI features" w... Read More
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,615, issued on Sept. 22, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Isolation module formation for backside power deli... Read More
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,616, issued on Sept. 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor structure inclu... Read More
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,617, issued on Sept. 22, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Improving via resistance to backside power... Read More
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,618, issued on Sept. 22, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device comprising non-oxidiz... Read More
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,619, issued on Sept. 22, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor device and method of manufacturing semicon... Read More
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,620, issued on Sept. 22, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Three-dimensional memory device including capped m... Read More
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,621, issued on Sept. 22, was assigned to Intel Corp. (Santa Clara, Calif.). "Inline circuit edit for backside power delivery with deep via... Read More